Publication Information

Title:
Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
Type:
Conference Proceedings
Info:
IEICE Tech. Rep., vol. 115, no. 329, ED2015-81, pp. 69-72, Nov. 2015.
Date:
2015-11-25

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy

Characteristic: Surface Reactions
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Keywords

Notes

TMG adsorption at room temperature and NH3 plasma at 115C.
539