Kensaku Kanomata Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Kensaku Kanomata returned 16 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
2Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
3Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
4Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
5Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
6Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
7Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
8Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
9Room temperature atomic layer deposition of TiO2 on gold nanoparticles
10Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
11Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
12Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
13RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
14RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
15RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
16Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source


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