Publication Information

Title: RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor

Type: Poster

Info: 227th ECS Meeting May 24, 2015 - May 28, 2015 Chicago, IL, MA2015-01 2274

Date: 2015-05-27

DOI: http://ma.ecsdl.org/content/MA2015-01/43/2274.abstract

Author Information

Name

Institution

Kensaku Kanomata

Yamagata University

P. Pungboon Pansila

Yamagata University

Hisashi Ohba

Yamagata University

Bashir Ahmmad

Yamagata University

Shigeru Kubota

Yamagata University

Kazuhiro Hirahara

Yamagata University

Fumihiko Hirose

Yamagata University

Films

Plasma Al2O3 using Custom

Deposition Temperature = 25C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Water, H2O

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Deposition Kinetics, Reaction Mechanism

IRAS, Infrared Reflection Absorption Spectroscopy

Unknown

Thickness

Ellipsometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Barrier Characteristics

Unknown

Unknown

Substrates

Si(100)

Keywords

Diffusion Barrier

Corrosion

Notes

526


Mark Sowa

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