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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
Type:
Poster
Info:
227th ECS Meeting May 24, 2015 - May 28, 2015 Chicago, IL, MA2015-01 2274
Date:
2015-05-27
Author Information
| Name | Institution |
|---|---|
| Kensaku Kanomata | Yamagata University |
| P. Pungboon Pansila | Yamagata University |
| Hisashi Ohba | Yamagata University |
| Bashir Ahmmad | Yamagata University |
| Shigeru Kubota | Yamagata University |
| Kazuhiro Hirahara | Yamagata University |
| Fumihiko Hirose | Yamagata University |
Films
Film/Plasma Properties
Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Barrier Characteristics
Analysis: -
Substrates
| Si(100) |
Notes
| 526 |