RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor

Type:
Poster
Info:
227th ECS Meeting May 24, 2015 - May 28, 2015 Chicago, IL, MA2015-01 2274
Date:
2015-05-27
DOI:
http://ma.ecsdl.org/content/MA2015-01/43/2274.abstract

Author Information

Name Institution
Kensaku KanomataYamagata University
P. Pungboon PansilaYamagata University
Hisashi OhbaYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Kazuhiro HiraharaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: -
Diagnostic: -

Substrates

Si(100)

Notes

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