Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen

Type:
Conference Proceedings
Info:
IEICE Technical Report Vol.115 No.5
Date:
2015-04-09
DOI:
http://i-scover.ieice.org/iscover/page/ARTICLE-6390858A-46D9-8415-419A-8056F25485CA

Author Information

Name Institution
Kensaku KanomataYamagata University
Hisashi OhbaYamagata University
P. Pungboon PansilaYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Kazuhiro HiraharaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma HfO2

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 25C

Plasma HfO2

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Notes

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