Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon

Type:
Conference Proceedings
Info:
ECS Meeting Abstracts
Date:
2016-10-05
DOI:
http://ma.ecsdl.org/content/MA2016-02/28/1875.abstract

Author Information

Name Institution
Fumihiko HiroseYamagata University
K. TokoroYamagata University
Kensaku KanomataYamagata University
Masanori MiuraYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University

Films

Plasma SnO2

Hardware used: Custom
TDMASn, (Me2N)4Sn, [(CH3)2N]4Sn, Tetrakis(DiMethylAmido) Tin, Tin Dimethylamide
CAS#: 1066-77-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Si(100)

Notes

872