Publication Information

Title: Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy

Type: Journal

Info: IEICE Transactions on Electronics Vol.E98-C No.5 pp.382-389

Date: 2015-05-01

DOI: http://search.ieice.org/bin/summary.php?id=e98-c_5_382

Author Information

Name

Institution

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Films

Plasma Ga2O3 using Custom

Deposition Temperature = 25C

1445-79-0

7732-18-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Deposition Kinetics, Reaction Mechanism

IRAS, Infrared Reflection Absorption Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Silicon

Keywords

Notes

524



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