Publication Information

Title:
Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
Type:
Journal
Info:
IEICE Transactions on Electronics Vol.E98-C No.5 pp.382-389
Date:
2015-05-01

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma Ga2O3

Hardware used: Custom


CAS#: 7732-18-5

CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Keywords

Notes

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