RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor

Type:
Journal
Info:
229th ECS Meeting
Date:
2016-05-30
DOI:
https://ecs.confex.com/ecs/229/webprogram/Paper69956.html

Author Information

Name Institution
Kensaku KanomataYamagata University
K. TokoroYamagata University
Takahiro ImaiYamagata University
P. Pungboon PansilaYamagata University
Masanori MiuraYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Kazuhiro HiraharaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma ZrO2

Hardware used: Custom
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Si(100)

Notes

767