Publication Information

Title:
Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
Type:
Conference Proceedings
Info:
2014 ECS and SMEQ Joint International Meeting
Date:
2014-10-05

Author Information

Name Institution
Kensaku KanomataYamagata University

Films


Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Si(100)

Keywords

Low-Temperature
PEALD Film Development

Notes

Room T PEALD of HfO2.
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