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Ideal for:
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Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source

Type:
Conference Proceedings
Info:
2014 ECS and SMEQ Joint International Meeting
Date:
2014-10-05
DOI:
http://ma.ecsdl.org/content/MA2014-01/36/1392.short

Author Information

Name Institution
Kensaku KanomataYamagata University

Films

Plasma HfO2

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Si(100)

Notes

Room T PEALD of HfO2.
282