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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
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Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia

Type:
Conference Proceedings
Info:
11th Topical Workshop on Heterostructure Microelectronics
Date:
2015-08-23
DOI:
https://www.researchgate.net/publication/281277150_Infrared_study_on_low_temperature_atomic_layer_deposition_of_GaN_using_trimethylgallium_and_plasma-excited_ammonia

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Shigeru KubotaYamagata University
Bashir AhmmadYamagata University
Fumihiko HiroseYamagata University

Films

Plasma GaN

Hardware used: Custom
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 115C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

GaN

Notes

393