Publication Information

Title:
Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
Type:
Conference Proceedings
Info:
11th Topical Workshop on Heterostructure Microelectronics
Date:
2015-08-23

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Shigeru KubotaYamagata University
Bashir AhmmadYamagata University
Fumihiko HiroseYamagata University

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

GaN

Keywords

Notes

393