Publication Information

Title: Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia

Type: Conference Proceedings

Info: 11th Topical Workshop on Heterostructure Microelectronics

Date: 2015-08-23

DOI: https://www.researchgate.net/publication/281277150_Infrared_study_on_low_temperature_atomic_layer_deposition_of_GaN_using_trimethylgallium_and_plasma-excited_ammonia

Author Information

Name

Institution

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Films

Plasma GaN using Custom

Deposition Temperature = 115C

1445-79-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Surface Reactions

ATR-FTIR

Custom

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

GaN

Keywords

Notes

393



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