Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon

Type:
Journal
Info:
Applied Surface Science 387 (2016) 497 - 502
Date:
2016-06-21
DOI:
http://dx.doi.org/10.1016/j.apsusc.2016.06.122

Author Information

Name Institution
Kensaku KanomataYamagata University
K. TokoroYamagata University
Takahiro ImaiYamagata University
P. Pungboon PansilaYamagata University
Masanori MiuraYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Kazuhiro HiraharaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma ZrO2

Hardware used: Custom
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: Custom

Substrates

Notes

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