Publication Information

Title: RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma

Type: Conference Proceedings

Info: IEICE Tech. Rep., vol. 114, no. 202, CPM2014-86, pp. 59-64, Sept. 2014

Date: 2014-08-28

DOI: http://www.ieice.org/ken/paper/20140905201409059BqO/eng/

Author Information

Name

Institution

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Yamagata University

Films

Plasma Ga2O3 using Unknown

Deposition Temperature = 25C

1445-79-0

7782-44-7

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Deposition Kinetics, Reaction Mechanism

IRAS, Infrared Reflection Absorption Spectroscopy

Unknown

Substrates

Keywords

Notes

562



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