Publication Information

Title:
RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
Type:
Conference Proceedings
Info:
IEICE Tech. Rep., vol. 114, no. 202, CPM2014-86, pp. 59-64, Sept. 2014
Date:
2014-08-28

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma Ga2O3

Hardware used: Unknown


CAS#: 7782-44-7

CAS#: 7732-18-5

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy

Substrates

Keywords

Notes

562