Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3

Type:
Journal
Info:
Applied Surface Science 357, Part B (2015) 1920 - 1927
Date:
2015-09-15
DOI:
http://dx.doi.org/10.1016/j.apsusc.2015.09.138

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Masanori MiuraYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma GaN

Hardware used: Unknown
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 115C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

GaN

Notes

474