Publication Information

Title:
Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
Type:
Journal
Info:
Applied Surface Science 357, Part B (2015) 1920 - 1927
Date:
2015-09-15

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Masanori MiuraYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

GaN

Keywords

Notes

474