A route to low temperature growth of single crystal GaN on sapphire
Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 7428-7436
Date:
2015-06-22
Author Information
| Name | Institution |
|---|---|
| Pouyan Motamedi | University of Alberta |
| Neda Dalili | National Institute for Nanotechnology, Alberta, Canada |
| Kenneth C. Cadien | University of Alberta |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Mobility
Analysis: Hall Measurements
Characteristic: Transmittance
Analysis: Optical Transmission
Substrates
| Sapphire |
Notes
| 379 |