Publication Information

Title: A route to low temperature growth of single crystal GaN on sapphire

Type: Journal

Info: J. Mater. Chem. C, 2015, 3, 7428-7436

Date: 2015-06-22

DOI: http://dx.doi.org/10.1039/C5TC01556A

Author Information

Name

Institution

University of Alberta

National Institute for Nanotechnology, Alberta, Canada

University of Alberta

Films

Deposition Temperature = 275C

1115-99-7

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Refractive Index

Ellipsometry

J.A. Woollam M-2000D

Extinction Coefficient

Ellipsometry

J.A. Woollam M-2000D

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D8 Discover

Density

XRR, X-Ray Reflectivity

Bruker D8 Discover

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension Edge

Microstructure

TEM, Transmission Electron Microscope

Hitachi HF 3300

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

Hitachi HF 3300

Images

TEM, Transmission Electron Microscope

Hitachi NB 5000

Resistivity, Sheet Resistance

Hall Measurements

Nanometrics HL5500

Mobility

Hall Measurements

Nanometrics HL5500

Transmittance

Optical Transmission

Perkin-Elmer lambda 1050 UV/Vis/NIR

Substrates

Sapphire

Keywords

Notes

379



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