Publication Information

Title:
A route to low temperature growth of single crystal GaN on sapphire
Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 7428-7436
Date:
2015-06-22

Author Information

Name Institution
Pouyan MotamediUniversity of Alberta
Neda DaliliNational Institute for Nanotechnology, Alberta, Canada
Ken CadienUniversity of Alberta

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Mobility
Analysis: Hall Measurements

Characteristic: Transmittance
Analysis: Optical Transmission

Substrates

Sapphire

Keywords

Notes

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