Publication Information

Title: Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: Nanoscience and Nanotechnology Letters, Volume 4, Number 10, October 2012 , pp. 1008-1014(7)

Date: 2012-10-01

DOI: http://dx.doi.org/10.1166/nnl.2012.1440

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range N/A

75-24-1

7664-41-7

Deposition Temperature Range N/A

1445-79-0

7664-41-7

Deposition Temperature Range N/A

1115-99-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

Unknown

Unknown

Bonding States

Unknown

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Unknown

Unknown

Substrates

Keywords

AlN

Atomic Layer Deposition

GaN

III-Nitride

Low-Temperature

Self-Limiting Growth

Structural Characterization

Thin Film

PEALD Film Development

Notes

1



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