Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Nanoscience and Nanotechnology Letters, Volume 4, Number 10, October 2012 , pp. 1008-1014(7)
Date:
2012-10-01

Author Information

Name Institution
Necmi BiyikliBilkent University
Çağla ÖzgitBilkent University
İnci DönmezBilkent University

Films

Plasma AlN


Plasma GaN


Plasma GaN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: -

Characteristic: Bonding States
Analysis: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -

Substrates

Keywords

AlN
Atomic Layer Deposition
GaN
III-Nitride
Low-Temperature
Self-Limiting Growth
Structural Characterization
Thin Film
PEALD Film Development

Notes

1