Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Nanoscience and Nanotechnology Letters, Volume 4, Number 10, October 2012 , pp. 1008-1014(7)
Date:
2012-10-01
Author Information
| Name | Institution |
|---|---|
| Necmi Biyikli | Bilkent University |
| Çağla Özgit | Bilkent University |
| İnci Dönmez | Bilkent University |
Films
Plasma AlN
Plasma GaN
Plasma GaN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: -
Characteristic: Bonding States
Analysis: -
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Substrates
Notes
| 1 |