Title: Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
Type: Journal
Info: Acta Phys. Sin. Vol. 66, No. 9 (2017) 098101
Date: 2017-02-06
DOI: http://dx.doi.org/10.7498/aps.66.098101
Name
Institution
Shandong University
Institute of Microelectronics of Chinese Academy of Sciences
Jiaxing Microelectronic Equipment
Shandong University
Institute of Microelectronics of Chinese Academy of Sciences
Characteristic
Analysis
Diagnostic
Thickness
Ellipsometry
-
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
XRD, X-Ray Diffraction
-
Chemical Composition, Impurities
XPS, X-ray Photoelectron Spectroscopy
-
Bonding States
XPS, X-ray Photoelectron Spectroscopy
-
Si(100)
Chinese paper with English abstract and figure labels
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