Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Acta Phys. Sin. Vol. 66, No. 9 (2017) 098101
Date:
2017-02-06
Author Information
| Name | Institution |
|---|---|
| Wen-Hui Tang | Shandong University |
| Bang-Wu Liu | Institute of Microelectronics of Chinese Academy of Sciences |
| Bo-Cheng Zhang | Jiaxing Microelectronic Equipment |
| Min Li | Shandong University |
| Yang Xia | Institute of Microelectronics of Chinese Academy of Sciences |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si(100) |
Notes
| Chinese paper with English abstract and figure labels |
| 1119 |