Publication Information

Title: Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Type: Journal

Info: Acta Phys. Sin. Vol. 66, No. 9 (2017) 098101

Date: 2017-02-06

DOI: http://dx.doi.org/10.7498/aps.66.098101

Author Information

Name

Institution

Shandong University

Institute of Microelectronics of Chinese Academy of Sciences

Jiaxing Microelectronic Equipment

Shandong University

Institute of Microelectronics of Chinese Academy of Sciences

Films

Plasma GaN using Custom ICP

Deposition Temperature Range = 150-300C

1445-79-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Si(100)

Keywords

Notes

Chinese paper with English abstract and figure labels

1119



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