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Publication Information

Title: Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Type: Journal

Info: Scientific Reports 5, Article number: Enter 13671 (2015)

Date: 2015-08-03

DOI: http://dx.doi.org/

Author Information

Name

Institution

National Taiwan University

Kyoto Institute of Technology

National Taiwan University of Science and Technology

Chinese Academy of Sciences

National Taiwan University

National Taiwan University

Chang Gung University

National Taiwan University

Films

Plasma GaN using Unknown

Deposition Temperature = 500C

1115-99-7

7664-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Refractive Index

Ellipsometry

Unknown

Extinction Coefficient

Ellipsometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Photoluminescence

PL, PhotoLuminescence

Unknown

Raman Spectra

Raman Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Threading Dislocations

SEM, Scanning Electron Microscopy

Unknown

Substrates

Sapphire

Keywords

Notes

409



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