Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
Type:
Journal
Info:
Scientific Reports 5, Article number: Enter 13671 (2015)
Date:
2015-08-03
Author Information
| Name | Institution |
|---|---|
| Huan-Yu Shih | National Taiwan University |
| Makoto Shiojiri | Kyoto Institute of Technology |
| Ching-Hsiang Chen | National Taiwan University of Science and Technology |
| Sheng-Fu Yu | Chinese Academy of Sciences |
| Chung-Ting Ko | National Taiwan University |
| Jer-Ren Yang | National Taiwan University |
| Ray-Ming Lin | Chang Gung University |
| Miin-Jang Chen | National Taiwan University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Threading Dislocations
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Sapphire |
Notes
| 409 |