Publication Information

Title:
Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
Type:
Journal
Info:
Chem. Mater. 2016, 28, 5282-5294
Date:
2016-07-01

Author Information

Name Institution
Jaclyn K. SprengerUniversity of Colorado, Boulder
A. S. CavanaghUniversity of Colorado, Boulder
Zhipei SunUniversity of Colorado, Boulder
Kathryn J. WahlU.S. Naval Research Laboratory
Alexana RoshkoNational Institute of Standards and Technology
Steven GeorgeUniversity of Colorado, Boulder

Films

Other GaN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Substrates

Si(111)

Keywords

Notes

930