Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
Type:
Journal
Info:
Chem. Mater. 2016, 28, 5282-5294
Date:
2016-07-01
Author Information
| Name | Institution |
|---|---|
| Jaclyn K. Sprenger | University of Colorado, Boulder |
| A. S. Cavanagh | University of Colorado, Boulder |
| Zhipei Sun | University of Colorado, Boulder |
| Kathryn J. Wahl | U.S. Naval Research Laboratory |
| Alexana Roshko | National Institute of Standards and Technology |
| Steven George | University of Colorado, Boulder |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Substrates
| Si(111) |
Notes
| 930 |