Publication Information

Title: Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions

Type: Journal

Info: Chem. Mater. 2016, 28, 5282-5294

Date: 2016-07-01

DOI: http://dx.doi.org/10.1021/acs.chemmater.6b00676

Author Information

Name

Institution

University of Colorado, Boulder

University of Colorado, Boulder

University of Colorado, Boulder

U.S. Naval Research Laboratory

National Institute of Standards and Technology

University of Colorado, Boulder

Films

Other GaN using Custom

Deposition Temperature = 100C

1445-79-0

1333-74-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

-

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

-

Substrates

Si(111)

Keywords

Notes

930



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