Publication Information

Title:
Perspectives on future directions in III-N semiconductor research
Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(5), Sep/Oct 2013
Date:
2013-07-16

Author Information

Name Institution
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
Neeraj NepalAmerican Society for Engineering Education
Jennifer K. HiteU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory

Films

Plasma AlN


Plasma GaN


Plasma InN



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Mobility
Analysis: Four Point Probe Hall Effect

Characteristic: Carrier Concentration
Analysis: Four Point Probe Hall Effect

Characteristic: Reflectance Spectra
Analysis: Reflection Spectroscopy

Substrates

Sapphire
Si(111)
GaN

Keywords

III-Nitride

Notes

All substrates solvent cleaned and DI rinsed.
Si(111) HF cleaned.
GaN HF + HCl cleaned.
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