In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylindium, elec. gr. (99.999%-In)
2EpiValenceπŸ‡¬πŸ‡§Indium Trimethyl
3DOCK/CHEMICALSπŸ‡©πŸ‡ͺTrimethylindium
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylindium, 98+% (99.9+%-In)
5Pegasus ChemicalsπŸ‡¬πŸ‡§Trimethylindium
6Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 28 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
3Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
4Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
5Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
6Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
7The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
8Atomic layer deposition of InN using trimethylindium and ammonia plasma
9Atomic layer epitaxy for quantum well nitride-based devices
10Perspectives on future directions in III-N semiconductor research
11Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
12Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
13Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
14Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
15Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
16Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
17Atomic layer epitaxy for quantum well nitride-based devices
18Perspectives on future directions in III-N semiconductor research