In(CH₃)₃, InMe₃, TriMethyl Indium, TMI, CAS# 3385-78-2

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Trimethylindium, 98+% (99.9+%-In)
2	Strem Chemicals, Inc.	Trimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD
3	Strem Chemicals, Inc.	Trimethylindium, elec. gr. (99.999%-In)

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 24 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Atomic layer epitaxy for quantum well nitride-based devices
2	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
3	Perspectives on future directions in III-N semiconductor research
4	Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
5	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
6	Atomic layer deposition of InN using trimethylindium and ammonia plasma
7	Atomic layer epitaxy for quantum well nitride-based devices
8	Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
9	Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
10	Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
11	Perspectives on future directions in III-N semiconductor research
12	Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
13	Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
14	Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors

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