Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylindium, elec. gr. (99.999%-In)
2DOCK/CHEMICALS🇩🇪Trimethylindium
3Strem Chemicals, Inc.🇺🇸Trimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD
4Strem Chemicals, Inc.🇺🇸Trimethylindium, 98+% (99.9+%-In)
5Pegasus Chemicals🇬🇧Trimethylindium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 28 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Perspectives on future directions in III-N semiconductor research
3Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
4Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
5Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
6Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
7Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
8Atomic layer deposition of InN using trimethylindium and ammonia plasma
9Atomic layer epitaxy for quantum well nitride-based devices
10Perspectives on future directions in III-N semiconductor research
11Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
12Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
14Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
15The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
16Atomic layer epitaxy for quantum well nitride-based devices
17Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
18Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors