In(CH₃)₃, InMe₃, TriMethyl Indium, TMI, CAS# 3385-78-2

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Trimethylindium, elec. gr. (99.999%-In)
2	Strem Chemicals, Inc.	Trimethylindium, 98+% (99.9+%-In)
3	Strem Chemicals, Inc.	Trimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 16 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Atomic layer epitaxy for quantum well nitride-based devices
2	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
3	Perspectives on future directions in III-N semiconductor research
4	Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
5	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
6	Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
7	Atomic layer epitaxy for quantum well nitride-based devices
8	Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
9	Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
10	Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
11	Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
12	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
13	Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
14	Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
15	Perspectives on future directions in III-N semiconductor research
16	Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

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