In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylindium, elec. gr. (99.999%-In)
2Strem Chemicals, Inc.Trimethylindium, 98+% (99.9+%-In)
3Strem Chemicals, Inc.Trimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 25 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer epitaxy for quantum well nitride-based devices
2Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
3Perspectives on future directions in III-N semiconductor research
4Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
5Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
6Atomic layer deposition of InN using trimethylindium and ammonia plasma
7Atomic layer epitaxy for quantum well nitride-based devices
8Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
9Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
10Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
11Perspectives on future directions in III-N semiconductor research
12Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
13The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
14Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
15Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors