In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylindium, elec. gr. (99.999%-In)
2Strem Chemicals, Inc.Trimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylindium, 98+% (99.9+%-In)

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 25 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer epitaxy for quantum well nitride-based devices
2Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
3Perspectives on future directions in III-N semiconductor research
4Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
5Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
6Atomic layer deposition of InN using trimethylindium and ammonia plasma
7Atomic layer epitaxy for quantum well nitride-based devices
8Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
9Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
10Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
11Perspectives on future directions in III-N semiconductor research
12Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
13The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
14Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
15Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors