In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD
2Strem Chemicals, Inc.🇺🇸Trimethylindium, 98+% (99.9+%-In)
3Pegasus Chemicals🇬🇧Trimethylindium
4DOCK/CHEMICALS🇩🇪Trimethylindium
5Strem Chemicals, Inc.🇺🇸Trimethylindium, elec. gr. (99.999%-In)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 28 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
2Perspectives on future directions in III-N semiconductor research
3Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
4Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
5Atomic layer epitaxy for quantum well nitride-based devices
6The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
7Atomic layer epitaxy for quantum well nitride-based devices
8Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
9Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
10Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
11Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
12Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
13Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
14Atomic layer deposition of InN using trimethylindium and ammonia plasma
15Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
16Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
17Perspectives on future directions in III-N semiconductor research
18Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition