In(CH3)3, InMe3, TriMethyl Indium, TMI, CAS# 3385-78-2

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD
2Strem Chemicals, Inc.Trimethylindium, elec. gr. (99.999%-In)
3Strem Chemicals, Inc.Trimethylindium, 98+% (99.9+%-In)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 21 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer epitaxy for quantum well nitride-based devices
2Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
3Perspectives on future directions in III-N semiconductor research
4Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
5Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
6Atomic layer epitaxy for quantum well nitride-based devices
7Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
8Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
9Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
10Perspectives on future directions in III-N semiconductor research
11Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
12Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors


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