
Atomic layer epitaxy for quantum well nitride-based devices
Type:
Journal
Info:
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII
Date:
2016-02-13
Author Information
Name | Institution |
---|---|
Jennifer K. Hite | U.S. Naval Research Laboratory |
Neeraj Nepal | Sotera Defense Solutions |
Virginia R. Anderson | American Society for Engineering Education |
Jaime A. Freitas | U.S. Naval Research Laboratory |
Michael A. Mastro | U.S. Naval Research Laboratory |
Charles R. Eddy, Jr. | U.S. Naval Research Laboratory |
Films
Plasma AlInN
Plasma InN
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
Si(111) |
Sapphire |
GaN |
Notes
803 |