Publication Information

Title:
Atomic layer epitaxy for quantum well nitride-based devices
Type:
Journal
Info:
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII
Date:
2016-02-13

Author Information

Name Institution
Jennifer K. HiteU.S. Naval Research Laboratory
Neeraj NepalSotera Defense Solutions
Virginia R. AndersonAmerican Society for Engineering Education
Jaime A. FreitasU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Si(111)
Sapphire
GaN

Keywords

Notes

803