Atomic layer epitaxy for quantum well nitride-based devices

Type:
Journal
Info:
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII
Date:
2016-02-13
DOI:
http://dx.doi.org/10.1117/12.2209111

Author Information

Name Institution
Jennifer K. HiteU.S. Naval Research Laboratory
Neeraj NepalSotera Defense Solutions
Virginia R. AndersonAmerican Society for Engineering Education
Jaime A. FreitasU.S. Naval Research Laboratory
Michael A. MastroU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma AlInN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Plasma InN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Si(111)
Sapphire
GaN

Notes

803