Publication Information

Title: Atomic layer epitaxy for quantum well nitride-based devices

Type: Journal

Info: Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII

Date: 2016-02-13

DOI: http://dx.doi.org/10.1117/12.2209111

Author Information

Name

Institution

U.S. Naval Research Laboratory

Sotera Defense Solutions

American Society for Engineering Education

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range N/A

75-24-1

3385-78-2

7727-37-9

1333-74-0

Deposition Temperature Range N/A

3385-78-2

7727-37-9

1333-74-0

Deposition Temperature Range N/A

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Substrates

Si(111)

Sapphire

GaN

Keywords

Notes

803



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