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Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 117, 093101 (2020)
Date:
2020-08-20
Author Information
| Name | Institution |
|---|---|
| Chih-Wei Hsu | Linköping University |
| Petro Deminskyi | Linköping University |
| Ivan Martinovic | Linköping University |
| Ivan G. Ivanov | Linköping University |
| Justinas Palisaitis | Linköping University |
| Henrik Pedersen | Linköping University |
Films
Plasma InN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Substrates
| 4H n-SiC(0001) |
Notes
| 1583 |