Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 117, 093101 (2020)
Date:
2020-08-20

Author Information

Name Institution
Chih-Wei HsuLinköping University
Petro DeminskyiLinköping University
Ivan MartinovicLinköping University
Ivan G. IvanovLinköping University
Justinas PalisaitisLinköping University
Henrik PedersenLinköping University

Films

Plasma InN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

4H n-SiC(0001)

Keywords

Notes

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