Publication Information

Title: Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy

Type: Journal

Info: Cryst. Growth Des. 2013, 13, 1485−1490

Date: 2013-02-07

DOI: http://dx.doi.org/10.1021/cg3016172

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range N/A

3385-78-2

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

LD, Laue Diffraction

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Band Gap

Reflection Spectroscopy

-

Resistivity, Sheet Resistance

Hall Measurements

-

Carrier Concentration

Hall Measurements

-

Thickness

Ellipsometry

J.A. Woollam VASE

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Substrates

Sapphire

Si(111)

GaN

Keywords

III-Nitride

Notes

Si(111) HF cleaned.

GaN(0001) HF + 15% HCl cleaned.

Substrates subjected to in situ N2 plasma prior to depositions.

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