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Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
Type:
Journal
Info:
Cryst. Growth Des. 2013, 13, 1485−1490
Date:
2013-02-07
Author Information
| Name | Institution |
|---|---|
| Neeraj Nepal | U.S. Naval Research Laboratory |
| Nadeemullah A. Mahadik | U.S. Naval Research Laboratory |
| Luke O. Nyakiti | U.S. Naval Research Laboratory |
| Syed B. Qadri | U.S. Naval Research Laboratory |
| Michael J. Mehl | U.S. Naval Research Laboratory |
| Jennifer K. Hite | U.S. Naval Research Laboratory |
| Charles R. Eddy, Jr. | U.S. Naval Research Laboratory |
Films
Plasma InN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: LD, Laue Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Band Gap
Analysis: Reflection Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Carrier Concentration
Analysis: Hall Measurements
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Sapphire |
| Si(111) |
| GaN |
Notes
| Si(111) HF cleaned. |
| GaN(0001) HF + 15% HCl cleaned. |
| Substrates subjected to in situ N2 plasma prior to depositions. |
| 59 |