Publication Information

Title:
Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
Type:
Journal
Info:
Cryst. Growth Des. 2013, 13, 1485−1490
Date:
2013-02-07

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Nadeemullah A. MahadikU.S. Naval Research Laboratory
Luke O. NyakitiU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Michael J. MehlU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma InN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: LD, Laue Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Band Gap
Analysis: Reflection Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Sapphire
Si(111)
GaN

Keywords

III-Nitride

Notes

Si(111) HF cleaned.
GaN(0001) HF + 15% HCl cleaned.
Substrates subjected to in situ N2 plasma prior to depositions.
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