Publication Information

Title:
Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 04F401 (2018)
Date:
2018-01-09

Author Information

Name Institution
Andrea IlliberiTNO
Ilias KatsourasTNO
Sasa GazibegovicTNO
Brian CobbTNO
Elida NekovicTNO
Willem van BoekelTNO
Corne FrijtersTNO
Joris MaasTNO
Fred RoozeboomTNO
Yves CreyghtonTNO
Paul PoodtTNO
Gerwin GelinckTNO

Films

Plasma InZnO


Plasma In2O3


Plasma ZnO


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Si(100)

Keywords

Notes

1272