Publication Information

Title: Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors

Type: Journal

Info: Journal of Vacuum Science & Technology A 36, 04F401 (2018)

Date: 2018-01-09

DOI: http://dx.doi.org/10.1116/1.5008464

Author Information

Name

Institution

TNO

TNO

TNO

TNO

TNO

TNO

TNO

TNO

TNO

TNO

TNO

TNO

Films

Plasma InZnO using Custom Spatial

Deposition Temperature = 160C

557-20-0

3385-78-2

7782-44-7

7727-37-9

Plasma In2O3 using Custom Spatial

Deposition Temperature = 160C

3385-78-2

7782-44-7

7727-37-9

Plasma ZnO using Custom Spatial

Deposition Temperature = 160C

557-20-0

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Refractive Index

Ellipsometry

J.A. Woollam M-2000D

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Philips X-pert SR5068

Images

TEM, Transmission Electron Microscope

JEOL JEM ARM 200

Thickness

TEM, Transmission Electron Microscope

JEOL JEM ARM 200

Transistor Characteristics

Transistor Characterization

Agilent 4155C Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Notes

1272



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