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Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 04F401 (2018)
Date:
2018-01-09
Author Information
| Name | Institution |
|---|---|
| Andrea Illiberi | TNO |
| Ilias Katsouras | TNO |
| Sasa Gazibegovic | TNO |
| Brian Cobb | TNO |
| Elida Nekovic | TNO |
| Willem van Boekel | TNO |
| Corne Frijters | TNO |
| Joris Maas | TNO |
| Fred Roozeboom | TNO |
| Yves Creyghton | TNO |
| Paul Poodt | TNO |
| Gerwin Gelinck | TNO |
Films
Plasma InZnO
Plasma In2O3
Plasma ZnO
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Si(100) |
Notes
| 1272 |