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Atomic layer deposition of InN using trimethylindium and ammonia plasma

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020926 (2019)
Date:
2019-02-05
DOI:
http://dx.doi.org/10.1116/1.5079279

Author Information

Name Institution
Petro DeminskyiLinköping University
Polla RoufLinköping University
Ivan G. IvanovLinköping University
Henrik PedersenLinköping University

Films

Plasma InN

Hardware used: Picosun R200
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 200-360C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Absorption Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Optical Bandgap
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Mechelle 900

Substrates

Si(100)

Notes

1404