Publication Information

Title:
Atomic layer deposition of InN using trimethylindium and ammonia plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020926 (2019)
Date:
2019-02-05

Author Information

Name Institution
Petro DeminskyiLinköping University
Polla RoufLinköping University
Ivan G. IvanovLinköping University
Henrik PedersenLinköping University

Films

Plasma InN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Absorption Coefficient
Analysis: Ellipsometry

Characteristic: Optical Bandgap
Analysis: Ellipsometry

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Substrates

Si(100)

Keywords

Notes

1404