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Atomic layer deposition of InN using trimethylindium and ammonia plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020926 (2019)
Date:
2019-02-05
Author Information
| Name | Institution |
|---|---|
| Petro Deminskyi | Linköping University |
| Polla Rouf | Linköping University |
| Ivan G. Ivanov | Linköping University |
| Henrik Pedersen | Linköping University |
Films
Plasma InN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Absorption Coefficient
Analysis: Ellipsometry
Characteristic: Optical Bandgap
Analysis: Ellipsometry
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Substrates
| Si(100) |
Notes
| 1404 |