Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Optical Materials 108 (2020) 110206
Date:
2020-07-20

Author Information

Name Institution
Melissa Chavez PortilloCiudad Universitaria
Salvador Gallardo-HernandezCinvestav
Yesmin Panecatl-BernalCiudad Universitaria
Isaac Martí­nez-VelisCinvestav
Julio Villanueva-CabBenemérita Universidad Autónoma de Puebla
Salvador AlcántaraCiudad Universitaria
Joaquin AlvaradoCiudad Universitaria

Films



Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Optical Properties
Analysis: UV-VIS Spectroscopy

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy

Characteristic: Refractive Index
Analysis: UV-VIS Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Substrates

Silicon

Keywords

Notes

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