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Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Optical Materials 108 (2020) 110206
Date:
2020-07-20
Author Information
| Name | Institution |
|---|---|
| Melissa Chavez Portillo | Ciudad Universitaria |
| Salvador Gallardo-Hernandez | Cinvestav |
| Yesmin Panecatl-Bernal | Ciudad Universitaria |
| Isaac Martínez-Velis | Cinvestav |
| Julio Villanueva-Cab | Benemérita Universidad Autónoma de Puebla |
| Salvador Alcántara | Ciudad Universitaria |
| Joaquin Alvarado | Ciudad Universitaria |
Films
Plasma AlxGa1-xN
Plasma InGaN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Optical Properties
Analysis: UV-VIS Spectroscopy
Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Characteristic: Refractive Index
Analysis: UV-VIS Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Substrates
| Silicon |
Notes
| 1605 |