Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Results in Physics 12 (2019) 804-809
Date:
2018-12-06
DOI:
https://doi.org/10.1016/j.rinp.2018.12.023

Author Information

Name Institution
Yunlai AnUniversity of Science and Technology
Yingfeng HeUniversity of Science and Technology
Huiyun WeiUniversity of Science and Technology
Sanjie LiuUniversity of Science and Technology
Meiling LiUniversity of Science and Technology
Yimeng SongUniversity of Science and Technology
Peng QiuUniversity of Science and Technology
Abdul RehmanUniversity of Science and Technology
Xinhe ZhengUniversity of Science and Technology
Mingzeng PengUniversity of Science and Technology

Films

Plasma InN

Hardware used: Angstrom-dep III PEALD
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 200-300C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Ultra 55

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2200FS

Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2200FS

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2200FS

Substrates

Si(100)

Notes

1298