Publication Information

Title:
Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Results in Physics 12 (2019) 804-809
Date:
2018-12-06

Author Information

Name Institution
Yunlai AnUniversity of Science and Technology
Yingfeng HeUniversity of Science and Technology
Huiyun WeiUniversity of Science and Technology
Sanjie LiuUniversity of Science and Technology
Meiling LiUniversity of Science and Technology
Yimeng SongUniversity of Science and Technology
Peng QiuUniversity of Science and Technology
Abdul RehmanUniversity of Science and Technology
Xinhe ZhengUniversity of Science and Technology
Mingzeng PengUniversity of Science and Technology

Films

Plasma InN


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Keywords

Notes

1298