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Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 051503 (2018)
Date:
2018-07-02
DOI:
http://dx.doi.org/10.1116/1.5034247

Author Information

Name Institution
David R. BorisU.S. Naval Research Laboratory
Virginia R. AndersonU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
Scooter D. JohnsonU.S. Naval Research Laboratory
Zachary R. RobinsonThe College at Brockport SUNY
Alexander Campbell KozenU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
Scott G. WaltonU.S. Naval Research Laboratory

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 480C

Plasma InN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics HR2000+

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Fastscan/ICON

Characteristic: Morphology, Roughness, Topography
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Diagnostic: Synchrotron

Substrates

Sapphire

Notes

1273