Publication Information

Title:
Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 031504 (2017)
Date:
2017-02-17

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Virginia R. AndersonAmerican Society for Engineering Education
Scooter D. JohnsonU.S. Naval Research Laboratory
Brian P. DowneyU.S. Naval Research Laboratory
David J. MeyerU.S. Naval Research Laboratory
Alexander DeMasiBoston University
Zachary R. RobinsonThe College at Brockport SUNY
Karl F. Ludwig Jr.Boston University
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma InN


Film/Plasma Properties

Characteristic: Nucleation
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Carrier Concentration
Analysis: van der Pauw sheet resistance

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance

Substrates

Sapphire

Keywords

Nucleation

Notes

1033