
Self-Limiting Growth of GaN at Low Temperatures
Type:
Journal
Info:
Acta Physica Polonica A 120, no. 6A (2011).
Date:
2011-09-19
Author Information
Name | Institution |
---|---|
Çağla Özgit | Bilkent University |
İnci Dönmez | Bilkent University |
Necmi Biyikli | Bilkent University |
Films
Plasma GaN
Plasma GaN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
Si(100) |
Si(111) |
Notes
Substrates HF dipped followed by DI rinse and N2 drying. |
Ultratech Fiji PEALD GaN film development. |
160 |