Publication Information

Title:
Self-Limiting Growth of GaN at Low Temperatures
Type:
Journal
Info:
Acta Physica Polonica A 120, no. 6A (2011).
Date:
2011-09-19

Author Information

Name Institution
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films

Plasma GaN


Plasma GaN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Si(100)
Si(111)

Keywords

Notes

Substrates HF dipped followed by DI rinse and N2 drying.
Ultratech Fiji PEALD GaN film development.
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