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Self-Limiting Growth of GaN at Low Temperatures

Type:
Journal
Info:
Acta Physica Polonica A 120, no. 6A (2011).
Date:
2011-09-19
DOI:
http://yadda.icm.edu.pl/yadda/element/bwmeta1.element.bwnjournal-article-appv120n6ap16kz

Author Information

Name Institution
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-500C

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Substrates

Si(100)
Si(111)

Notes

Substrates HF dipped followed by DI rinse and N2 drying.
Ultratech Fiji PEALD GaN film development.
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