Publication Information

Title: Self-limiting growth of GaN using plasma-enhanced atomic layer deposition

Type: Poster

Info: ALD 2011

Date: 2011-06-26

DOI: No DOI

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range = 100-400C

75-24-1

7664-41-7

Deposition Temperature Range = 100-500C

1445-79-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Custom

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Unknown

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Si(100)

Keywords

PEALD Film Development

Notes

Substrates organic cleaned + HF

19



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