Self-limiting growth of GaN using plasma-enhanced atomic layer deposition

Type:
Poster
Info:
ALD 2011
Date:
2011-06-26
DOI:
No DOI

Author Information

Name Institution
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Mustafa AlevliBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN


Plasma GaN


Film/Plasma Properties

Characteristic: Thickness
Analysis: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Custom

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Keywords

PEALD Film Development

Notes

Substrates organic cleaned + HF
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