Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application

Type:
Journal
Info:
Ceramics International 46 (2020) 5765-5772
Date:
2019-11-04

Author Information

Name Institution
Peng QiuUniversity of Science and Technology
Huiyun WeiUniversity of Science and Technology
Yunlai AnUniversity of Science and Technology
Qixin WuUniversity of Science and Technology
Wenxin DuUniversity of Science and Technology
Zengxuan JiangUniversity of Science and Technology
Lang ZhouUniversity of Science and Technology
Chuang GaoUniversity of Science and Technology
Sanjie LiuUniversity of Science and Technology
Yingfeng HeUniversity of Science and Technology
Yimeng SongUniversity of Science and Technology
Mingzeng PengUniversity of Science and Technology
Xinhe ZhengUniversity of Science and Technology

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Valence Band
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: UV-Vis Transmission
Analysis: UV-VIS Spectroscopy

Substrates

FTO, F:SnO2

Keywords

Notes

1556