Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Current Applied Physics Volume 19, Issue 2, 2019, Pages 72-81
Date:
2018-11-21

Author Information

Name Institution
Xing LiFudan University
Hong Liang LuFudan University
Hong-Ping MaFudan University
Jian-Guo YangFudan University
Jin-Xin ChenFudan University
Wei HuangFudan University
Qixin GuoSaga University
Ji-Jun FengUniversity of Shanghai for Science and Technology
David Wei ZhangFudan University

Films

Plasma Ga2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Quartz
Si(100)

Keywords

Notes

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