Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022404 (2020)
Date:
2019-12-20
Author Information
Name | Institution |
---|---|
Ali Mahmoodinezhad | Brandenburg University of Technology |
Christoph Janowitz | Brandenburg University of Technology |
Franziska Naumann | Sentech Instruments GmbH |
Paul Plate | Sentech Instruments GmbH |
Hassan Gargouri | Sentech Instruments GmbH |
Karsten Henkel | Brandenburg University of Technology |
Dieter Schmeißer | Brandenburg University of Technology |
Jan Ingo Flege | Brandenburg University of Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Optical Bandgap
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
Si with native oxide |
Notes
1573 |