Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022404 (2020)
Date:
2019-12-20

Author Information

Name Institution
Ali MahmoodinezhadBrandenburg University of Technology
Christoph JanowitzBrandenburg University of Technology
Franziska NaumannSentech Instruments GmbH
Paul PlateSentech Instruments GmbH
Hassan GargouriSentech Instruments GmbH
Karsten HenkelBrandenburg University of Technology
Dieter Schmei├čerBrandenburg University of Technology
Jan Ingo FlegeBrandenburg University of Technology

Films

Plasma Ga2O3

Hardware used: SENTECH


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Optical Bandgap
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Si with native oxide

Keywords

Notes

1573