Publication Information

Title:
Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 9, Issue 4, pages 220--224, 2015
Date:
2015-03-23

Author Information

Name Institution
Thomas G. AllenThe Australian National University
Andres CuevasThe Australian National University

Films

Plasma Ga2O3


Film/Plasma Properties

Characteristic: Lifetime
Analysis: Photoconductance

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Surface Defect Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Optical Bandgap
Analysis: Optical Transmission

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Microstructure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Substrates

Si(100)

Keywords

Solar
Passivation

Notes

518