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Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge

Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 9, Issue 4, pages 220--224, 2015
Date:
2015-03-23
DOI:
http://dx.doi.org/10.1002/pssr.201510056

Author Information

Name Institution
Thomas G. AllenThe Australian National University
Andres CuevasThe Australian National University

Films

Plasma Ga2O3

Hardware used: Beneq TFS-200
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Surface Defect Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Optical Bandgap
Analysis: Optical Transmission
Diagnostic: Perkin-Elmer lambda 1050 UV/Vis/NIR

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 80V

Characteristic: Microstructure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 80V

Substrates

Si(100)

Notes

518