Publication Information

Title: Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge

Type: Journal

Info: physica status solidi (RRL) - Rapid Research Letters Volume 9, Issue 4, pages 220--224, 2015

Date: 2015-03-23

DOI: http://dx.doi.org/10.1002/pssr.201510056

Author Information

Name

Institution

The Australian National University

The Australian National University

Films

Plasma Ga2O3 using Beneq TFS-200

Deposition Temperature Range N/A

1445-79-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Lifetime

Unknown

Unknown

Surface Recombination Velocity

Unknown

Unknown

Fixed Charge Density

C-V, Capacitance-Voltage Measurements

Unknown

Surface Defect Density

C-V, Capacitance-Voltage Measurements

Unknown

Optical Bandgap

Ellipsometry

Unknown

Substrates

Si(100)

Keywords

Notes

518



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