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Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 9, Issue 4, pages 220--224, 2015
Date:
2015-03-23
Author Information
| Name | Institution |
|---|---|
| Thomas G. Allen | The Australian National University |
| Andres Cuevas | The Australian National University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Lifetime
Analysis: Photoconductance
Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Surface Defect Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Optical Bandgap
Analysis: Optical Transmission
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Microstructure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Substrates
| Si(100) |
Notes
| 518 |