Plasma enhanced atomic layer deposition of gallium sulfide thin films
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020915 (2019)
Date:
2019-01-03
Author Information
| Name | Institution |
|---|---|
| Jakob Kuhs | Ghent University |
| Zeger Hens | Ghent University |
| Christophe Detavernier | Ghent University |
Films
Plasma GaS
Film/Plasma Properties
Characteristic: Conformality, Step Coverage
Analysis: Micropillars
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Transmittance
Analysis: Optical Transmission
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| SiO2 |
| Quartz |
Notes
| No thermal ALD reaction between TMGa and H2S |
| 1253 |