Publication Information

Title: Plasma enhanced atomic layer deposition of gallium sulfide thin films

Type: Journal

Info: Journal of Vacuum Science & Technology A 37, 020915 (2019)

Date: 2019-01-03

DOI: http://dx.doi.org/10.1116/1.5079553

Author Information

Name

Institution

Ghent University

Ghent University

Ghent University

Films

Plasma GaS using Custom ICP

Deposition Temperature Range = 70-350C

1445-79-0

7783-06-4

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Conformality, Step Coverage

Micropillars

Custom

Thickness

Ellipsometry

J.A. Woollam M-2000

Refractive Index

Ellipsometry

J.A. Woollam M-2000

Extinction Coefficient

Ellipsometry

J.A. Woollam M-2000

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Discover

Transmittance

Optical Transmission

PerkinElmer lambda 950 Spectrophotometer

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Hiden HPR-30

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D8 Discover

Images

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension Edge

Substrates

SiO2

Quartz

Keywords

Notes

No thermal ALD reaction between TMGa and H2S

1253



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