Publication Information

Title:
Plasma enhanced atomic layer deposition of gallium sulfide thin films
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020915 (2019)
Date:
2019-01-03

Author Information

Name Institution
Jakob KuhsGhent University
Zeger HensGhent University
Christophe DetavernierGhent University

Films

Plasma GaS


Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: Micropillars

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Transmittance
Analysis: Optical Transmission

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

SiO2
Quartz

Keywords

Notes

No thermal ALD reaction between TMGa and H2S
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