H2S, Hydrogen Sulfide, CAS# 7783-06-4

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma enhanced atomic layer deposition of aluminum sulfide thin films
2Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
3Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
4Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
5Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
6Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
7Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
8Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
9WS2 transistors on 300 mm wafers with BEOL compatibility
10Plasma enhanced atomic layer deposition of zinc sulfide thin films


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