H2S, Hydrogen Sulfide, CAS# 7783-06-4

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 11 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma enhanced atomic layer deposition of aluminum sulfide thin films
2Plasma enhanced atomic layer deposition of gallium sulfide thin films
3Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
4Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
5Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
6Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
7Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
8Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
9Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
10WS2 transistors on 300 mm wafers with BEOL compatibility
11Plasma enhanced atomic layer deposition of zinc sulfide thin films


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