Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (3), pp 3873-3885
Date:
2019-12-27
DOI:
http://dx.doi.org/10.1021/acsami.9b19716

Author Information

Name Institution
Shashank BalasubramanyamEindhoven University of Technology
Matthew A. BloodgoodEindhoven University of Technology
Mark van OmmerenEindhoven University of Technology
Tahsin FarazEindhoven University of Technology
Vincent VandalonEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology

Films

Plasma WS2

Hardware used: Oxford Instruments FlexAL
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
Where to buy precursor
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
Deposition Temperature Range = 300-450C

Plasma WS2

Hardware used: Oxford Instruments FlexAL
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
Where to buy precursor
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 450C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000F

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Morphology, Roughness, Topography
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: JEOL JEM ARM 200

Characteristic: Microstructure
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: JEOL JEM ARM 200

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone

Substrates

SiO2

Notes

Full paper available in thesis.
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