Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 010907 (2019)
Date:
2018-12-04
DOI:
http://dx.doi.org/10.1116/1.5074201

Author Information

Name Institution
Asad J. MughalThe Pennsylvania State University
Timothy N. WalterThe Pennsylvania State University
Kayla A. CooleyThe Pennsylvania State University
Adam BertuchVeeco Instruments
Suzanne E. MohneyThe Pennsylvania State University

Films

Plasma MoS2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
Where to buy precursor
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: Inficon

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-88

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Thickness
Analysis: Raman Spectroscopy
Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Talos F200X

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Talos F200X

Substrates

SiO2
Sapphire
GaN

Notes

Used sapphire plasma tube due to Si contamination from quartz tube.
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