Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

Type:
Journal
Info:
Beilstein J. Nanotechnol. 2013, 4, 750-757.
Date:
2013-10-24
DOI:
http://dx.doi.org/10.3762/bjnano.4.85

Author Information

Name Institution
Cathy BugotInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)
Nathanaëlle SchneiderInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)
Daniel LincotInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)
Frédérique DonsantiInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)

Films

Thermal In2S3

Hardware used: Picosun R200
In(acac)3, Indium(III) acetylacetonate
CAS#: 14405-45-9
Where to buy precursor
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
Deposition Temperature Range = 140-240C

Other In2(S,O)3

Hardware used: Picosun R200
In(acac)3, Indium(III) acetylacetonate
CAS#: 14405-45-9
Where to buy precursor
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 200C

Plasma In2(S,O)3

Hardware used: Picosun R200
In(acac)3, Indium(III) acetylacetonate
CAS#: 14405-45-9
Where to buy precursor
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 160C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Oxford INCA 350 Energy Spectrometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Optical Properties
Analysis: Optical Transmission
Diagnostic: PerkinElmer lambda 900 Spectrophotometer

Characteristic: Optical Properties
Analysis: Optical Reflectivity
Diagnostic: PerkinElmer lambda 900 Spectrophotometer

Characteristic: Band Gap
Analysis: Optical Absorption
Diagnostic: PerkinElmer lambda 900 Spectrophotometer

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Dektak

Substrates

Glass
Si(100)

Notes

O2 plasma radicals appear to exchange for S regardless if it was preceded by an In(acac)3 pulse.
In2(S,O)3 only worked with O2 plasma as O-source.
Picosun SUNALE R-200 mixed thermal and plasma ALD study of In2(O,S)3, In2S3, and In2O3 for CIGS solar cell absorber layer.
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