Publication Information

Title:
Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
Type:
Journal
Info:
Beilstein J. Nanotechnol. 2013, 4, 750-757.
Date:
2013-10-24

Author Information

Name Institution
Cathy BugotInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)
Nathanaëlle SchneiderInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)
Daniel LincotInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)
Frédérique DonsantiInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)

Films

Thermal In2S3


Other In2(S,O)3


Plasma In2(S,O)3


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Optical Properties
Analysis: Optical Transmission

Characteristic: Optical Properties
Analysis: Optical Reflectivity

Characteristic: Band Gap
Analysis: Optical Absorption

Characteristic: Thickness
Analysis: Profilometry

Substrates

Glass
Si(100)

Keywords

CIGS
Solar
PEALD Film Development

Notes

O2 plasma radicals appear to exchange for S regardless if it was preceded by an In(acac)3 pulse.
In2(S,O)3 only worked with O2 plasma as O-source.
Picosun SUNALE R-200 mixed thermal and plasma ALD study of In2(O,S)3, In2S3, and In2O3 for CIGS solar cell absorber layer.
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