Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:

  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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WS2 transistors on 300 mm wafers with BEOL compatibility

Type:
Journal
Info:
2017 47th European Solid-State Device Research Conference (ESSDERC)
Date:
2017-09-11

Author Information

Name Institution
T. SchramIMEC
Quentin SmetsIMEC
Benjamin GrovenIMEC
Markus HeyneIMEC
E. KunnenIMEC
A. ThiamIMEC
K. DevriendtIMEC
Annelies DelabieIMEC
D. LinIMEC
M. LuxIMEC
D. ChiappeIMEC
Inge AsselberghsIMEC
S. BrusIMEC
Cedric HuyghebaertIMEC
S. SayanIMEC
A. JunckerCOVENTOR
Matty CaymaxIMEC
Iuliana RaduIMEC

Films

Other WS2


Film/Plasma Properties

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Al2O3

Notes

1150