WF6, Tungsten Hexafluoride, CAS# 7783-82-6

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
2Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
3A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
4WS2 transistors on 300 mm wafers with BEOL compatibility
5Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
6Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
7Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
8Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
9WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
10Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
11Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
12Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
13Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
14Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
15Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films