WF6, Tungsten Hexafluoride, CAS# 7783-82-6

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 15 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
2Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
3A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
4Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
5Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
6Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
7Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
8Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
9Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
10WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
11Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
12Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
13Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
14WS2 transistors on 300 mm wafers with BEOL compatibility
15Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates