Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34(1) 2016
Date:
2015-10-26
DOI:
http://dx.doi.org/10.1116/1.4935356

Author Information

Name Institution
Alexander StrobelWestsächsische Hochschule Zwickau
Hans-Dieter SchnabelWestsächsische Hochschule Zwickau
Ullrich ReinholdWestsächsische Hochschule Zwickau
Sebastian RauerWestsächsische Hochschule Zwickau
Andreas NeidhardtWestsächsische Hochschule Zwickau

Films

Plasma TiO2

Hardware used: FHR-150-ALD
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 30-180C

Plasma TiO2

Hardware used: FHR-150-ALD
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range = 30-180C

Plasma WO3

Hardware used: FHR-150-ALD
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range = 30-180C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Substrates

Si(111)

Notes

406