Publication Information

Title:
Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
Type:
Journal
Info:
phys. stat. sol. (a) 202, No. 14, R164–R166 (2005)
Date:
2005-10-20

Author Information

Name Institution
Yong Tae KimKorea Institute of Science and Technology
Ji Ho ParkKorea Institute of Science and Technology

Films

Plasma WCN

Hardware used: Custom


CAS#: 7727-37-9

CAS#: 74-82-8

Plasma WCN

Hardware used: Custom


CAS#: 7664-41-7

CAS#: 74-82-8

Plasma WN

Hardware used: Custom


CAS#: 7664-41-7

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Barrier Characteristics
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

SiO2 surface pretreated with N2/H2 plasma prior to film deposition.
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