Publication Information

Title: Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect

Type: Journal

Info: J. Vac. Sci. Technol. B 21(4), Jul/Aug 2003

Date: 2003-07-11

DOI: http://dx.doi.org/10.1116/1.1592806

Author Information

Name

Institution

Korea Institute of Science and Technology

Korea Institute of Science and Technology

Korea Institute of Science and Technology

Films

Thermal WN using Unknown

Deposition Temperature Range = 300-350C

7783-82-6

7664-41-7

Plasma WN using Unknown

Deposition Temperature Range = 300-350C

7783-82-6

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

NRA, Nuclear-Resonance Analysis

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Diffusion Barrier Properties

RBS, Rutherford Backscattering Spectrometry

-

Substrates

Si(100)

SiO2

Keywords

Diffusion Barrier

Interconnect

Notes

WF6 reacts directly with Si and SiO2 to make volatile SiF4.

Pulsed NH3 plasma converts surface to Si-O-N which prevents the spontaneous Si etching from the WF6 exposure.

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