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Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect

Type:
Journal
Info:
J. Vac. Sci. Technol. B 21(4), Jul/Aug 2003
Date:
2003-07-11
DOI:
http://dx.doi.org/10.1116/1.1592806

Author Information

Name Institution
Hyun Sang SimKorea Institute of Science and Technology
Seong-Il KimKorea Institute of Science and Technology
Yong Tae KimKorea Institute of Science and Technology

Films

Thermal WN

Hardware used: Unknown
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 300-350C

Plasma WN

Hardware used: Unknown
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 300-350C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear-Resonance Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

WF6 reacts directly with Si and SiO2 to make volatile SiF4.
Pulsed NH3 plasma converts surface to Si-O-N which prevents the spontaneous Si etching from the WF6 exposure.
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