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Publication Information

Title: Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect

Type: Journal

Info: J. Vac. Sci. Technol. B 21(4), Jul/Aug 2003

Date: 2003-07-11

DOI: http://dx.doi.org/10.1116/1.1592806

Author Information

Name

Institution

Korea Institute of Science and Technology

Korea Institute of Science and Technology

Korea Institute of Science and Technology

Films

Thermal WN using Unknown

Deposition Temperature Range = 300-350C

7783-82-6

7664-41-7

Plasma WN using Unknown

Deposition Temperature Range = 300-350C

7783-82-6

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

NRA, Nuclear-Resonance Analysis

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Diffusion Barrier Properties

RBS, Rutherford Backscattering Spectrometry

Unknown

Substrates

Si(100)

SiO2

Keywords

Diffusion Barrier

Interconnect

Notes

WF6 reacts directly with Si and SiO2 to make volatile SiF4.

Pulsed NH3 plasma converts surface to Si-O-N which prevents the spontaneous Si etching from the WF6 exposure.

306


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