Publication Information

Title: Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 01A129 (2016)

Date: 2015-11-11

DOI: http://dx.doi.org/10.1116/1.4936387

Author Information

Name

Institution

University of Twente

University of Twente

University of Twente

University of Twente

University of Twente

University of Twente

Films

Plasma W using Custom

Deposition Temperature = 315C

7783-82-6

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Resistivity, Sheet Resistance

Four-point Probe

Polytec

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Images

SEM, Scanning Electron Microscopy

-

Thickness

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Fastscan/ICON

Images

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

EFTEM, Energy Filtered Transmission Electron Microscopy

-

Substrates

W

Keywords

Notes

Discusses using Te etching as a means to determine H-radical flux.

411



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