Publication Information

Title:
Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A129 (2016)
Date:
2015-11-11

Author Information

Name Institution
Mengdi YangUniversity of Twente
Antonius A. I. AarninkUniversity of Twente
Alexey Y. KovalginUniversity of Twente
Dirk. J. GravesteijnUniversity of Twente
Rob A. M. WoltersUniversity of Twente
Jurriaan SchmitzUniversity of Twente

Films

Plasma W


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EFTEM, Energy Filtered Transmission Electron Microscopy

Substrates

W

Keywords

Notes

Discusses using Te etching as a means to determine H-radical flux.
411