WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications

Type:
Conference Proceedings
Info:
ECS Transactions, 3 (15) 147-152 (2007)
Date:
2007-07-01

Author Information

Name Institution
Dong Ho YouIPS Ltd.
Soo-Hyun KimIPS Ltd.
Ki-Hoon LeeIPS Ltd.
Sang Kyu LeeIPS Ltd.
Tea Wook SeoIPS Ltd.

Films

Plasma WN



Plasma WN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

SiO2

Notes

1177