Publication Information

Title: WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications

Type: Conference Proceedings

Info: ECS Transactions, 3 (15) 147-152 (2007)

Date: 2007-07-01

DOI: http://dx.doi.org/10.1149/1.2721483

Author Information

Name

Institution

IPS Ltd.

IPS Ltd.

IPS Ltd.

IPS Ltd.

IPS Ltd.

Films

Deposition Temperature Range = 360-520C

406462-43-9

7664-41-7

Thermal WN using Custom Direct Plasma

Deposition Temperature Range N/A

406462-43-9

7664-41-7

Deposition Temperature Range N/A

7783-82-6

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Thickness

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Interlayer

TEM, Transmission Electron Microscope

-

Resistivity, Sheet Resistance

Four-point Probe

-

Substrates

SiO2

Keywords

Notes

1177



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