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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
Type:
Journal
Info:
physica status solidi (a) Volume 212, Issue 7, pages 1607-1614, July 2015
Date:
2015-04-30
Author Information
| Name | Institution |
|---|---|
| Mengdi Yang | University of Twente |
| Antonius A. I. Aarnink | University of Twente |
| Alexey Y. Kovalgin | University of Twente |
| Rob A. M. Wolters | University of Twente |
| Jurriaan Schmitz | University of Twente |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
Keywords
Notes
| 488 |