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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
Type:
Journal
Info:
physica status solidi (a) Volume 212, Issue 7, pages 1607-1614, July 2015
Date:
2015-04-30
Author Information
| Name | Institution |
|---|---|
| Mengdi Yang | University of Twente |
| Antonius A. I. Aarnink | University of Twente |
| Alexey Y. Kovalgin | University of Twente |
| Rob A. M. Wolters | University of Twente |
| Jurriaan Schmitz | University of Twente |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
Keywords
Notes
| 488 |