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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
Type:
Journal
Info:
physica status solidi (a) Volume 212, Issue 7, pages 1607-1614, July 2015
Date:
2015-04-30
Author Information
| Name | Institution |
|---|---|
| Mengdi Yang | University of Twente |
| Antonius A. I. Aarnink | University of Twente |
| Alexey Y. Kovalgin | University of Twente |
| Rob A. M. Wolters | University of Twente |
| Jurriaan Schmitz | University of Twente |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
Notes
| 488 |