Publication Information

Title:
Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
Type:
Journal
Info:
2013 Jpn. J. Appl. Phys. 52 10MC07
Date:
2013-10-21

Author Information

Name Institution
Yeong ­Hyeon HwangKwangwoon University
Yeong ­Hyeon HwangKwangwoon University
Won ­Ju ChoKwangwoon University
Yong Tae KimKorea Institute of Science and Technology

Films

Plasma WN

Hardware used: Unknown


CAS#: 7664-41-7

Other WN

Hardware used: Unknown


CAS#: 7664-41-7

Thermal WN


Film/Plasma Properties

Characteristic: Thickness
Analysis: -

Characteristic: Conformality, Step Coverage
Analysis: -

Characteristic: Chemical Composition, Impurities
Analysis: -

Substrates

Keywords

Diffusion Barrier
Interconnect

Notes

Abstract does not make it clear what exactly is the process. Good results with B2H6 treatment but no mention of a N-containing precursor or co-reactant.
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