Publication Information

Title: Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization

Type: Journal

Info: 2013 Jpn. J. Appl. Phys. 52 10MC07

Date: 2013-10-21

DOI: http://dx.doi.org/10.7567/JJAP.52.10MC07

Author Information

Name

Institution

Kwangwoon University

Kwangwoon University

Kwangwoon University

Korea Institute of Science and Technology

Films

Plasma WN using Unknown

Deposition Temperature Range N/A

7783-82-6

7664-41-7

Other WN using Unknown

Deposition Temperature Range N/A

7783-82-6

7664-41-7

Thermal WN using Unknown

Deposition Temperature Range N/A

7783-82-6

7664-41-7

19287-45-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

-

Conformality, Step Coverage

Unknown

-

Chemical Composition, Impurities

Unknown

-

Substrates

Keywords

Diffusion Barrier

Interconnect

Notes

Abstract does not make it clear what exactly is the process. Good results with B2H6 treatment but no mention of a N-containing precursor or co-reactant.

310



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