Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier

Type:
Journal
Info:
J. Vac. Sci. Technol. B 24(3), May/Jun 2006
Date:
2006-04-17
DOI:
http://dx.doi.org/10.1116/1.2203639

Author Information

Name Institution
Chang Woo LeeKookmin University
Yong Tae KimKookmin University

Films

Thermal WN

Hardware used: Unknown
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 300-350C

Plasma WN

Hardware used: Unknown
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 300-350C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

WF6 reacts directly with Si and SiO2 to make volatile SiF4.
Pulsed NH3 plasma converts surface to Si-O-N which prevents the spontaneous Si etching from the WF6 exposure.
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