Publication Information

Title: Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier

Type: Journal

Info: J. Vac. Sci. Technol. B 24(3), May/Jun 2006

Date: 2006-04-17

DOI: http://dx.doi.org/10.1116/1.2203639

Author Information

Name

Institution

Kookmin University

Kookmin University

Films

Thermal WN using Unknown

Deposition Temperature Range = 300-350C

7783-82-6

7664-41-7

Plasma WN using Unknown

Deposition Temperature Range = 300-350C

7783-82-6

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Diffusion Barrier Properties

RBS, Rutherford Backscattering Spectrometry

-

Substrates

Si(100)

SiO2

Keywords

Diffusion Barrier

Interconnect

Notes

WF6 reacts directly with Si and SiO2 to make volatile SiF4.

Pulsed NH3 plasma converts surface to Si-O-N which prevents the spontaneous Si etching from the WF6 exposure.

309



Shortcuts



© 2014-2019 plasma-ald.com