Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A105 (2018)
Date:
2017-10-16

Author Information

Name Institution
Benjamin GrovenKU Leuven
Ankit Nalin MehtaKU Leuven
Hugo BenderIMEC
Quentin SmetsIMEC
Johan MeersschautIMEC
A. FranquetIMEC
Thierry ConardIMEC
Thomas NuyttenIMEC
Patrick VerdonckIMEC
Wilfried VandervorstKU Leuven
Marc HeynsKU Leuven
Iuliana RaduIMEC
Matty CaymaxIMEC
Annelies DelabieKU Leuven

Films

Other WS2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Resistivity, Sheet Resistance
Analysis: TLM, Transmission Line Measurement

Substrates

Al2O3
Sapphire

Notes

1104